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Si2306BDS
Vishay Siliconix
SPECIFICATIONS T A = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
30
1.0
3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS ≥ 4.5 V, V GS = 10 V
6
± 100
0.5
10
nA
μA
A
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
R DS(on)
g fs
V SD
V GS = 10 V, I D = 3.5 A
V GS = 4.5 V, I D = 2.8 A
V DS = 4.5 V, I D = 2.5 A
I S = 1.25 A, V GS = 0 V
0.038
0.052
7.0
0.8
0.047
0.065
1.2
Ω
S
V
Dynamic
Gate Charge
Q g
V DS = 15 V, V GS = 5 V, I D = 2.5 A
3.0
4.5
Total Gate Charge
Gate-Source Charge
Q gt
Q gs
V DS = 15 V, V GS = 10 V, I D = 2.5 A
6
1.6
9
nC
Gate-Drain Charge
Q gd
0.6
Gate Resistance
R g
f = 1.0 MHz
2.5
5
7.5
Ω
Input Capacitance
C iss
305
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 15 V, V GS = 0 V, f = 1 MHz
65
29
pF
Switching
Turn-On Delay Time
t d(on)
7
11
Rise Time
Turn-Off Delay Time
Fall Time
Reverse Recovery Time
Body Diode Reverse Recovery Charge
t r
t d(off)
t f
t rr
Q rr
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 1.25 A, di/dt = 100 A/μs
12
14
6
14
6
18
25
10
21
10
ns
nC
Notes:
a. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
V GS = 10 thru 5 V
20
16
12
8
4V
16
12
8
T C = 125 °C
4
4
25 °C
0
3V
0
- 55 °C
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
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